A grand opening for 150 mm RF Gallium Nitride (GaN) fab in Chandler, Arizona, was announced recently by NXP Semiconductors N.V. (NASDAQ: NXPI).
The new factory in Chandler merges NXP's expertise in RF power with its high-volume manufacturing., with an end-result of innovation that is simple and easy and encourages the expansion of 5G base stations and advanced communication in markets of industrial, aerospace, and defense, according to a press release from the Arizona Commerce Authority.
The opening ceremony had some keynote speakers and comments from NXP executives as well as federal, state, and local officials such as Sen. Kyrsten Sinema (D-Arizona), Martha McSally (R-Arizona), Rep. Greg Stanton (D-Arizona), Gov. Doug Ducey (R-Arizona), Chandler Mayor Kevin Hartke, U.S. Department of Commerce Deputy Under Secretary for International Trade Joseph Semsar, and Ambassador of the Kingdom of the Netherlands to the United States Andre Haspels.
The NXP CEO had a keynote address saying, “Today marks a critical milestone for NXP. By building this incredible facility and tapping key talent in Arizona, we are able to bring focus to GaN technology as part of driving the next generation of 5G base station infrastructure," Kurt Sievers said in the press release.
The head of Development Unit Networks at Ericsson and longtime NXP customer Joakim Sorelius said, "We strive to deliver industry-leading products that provide maximum value to our customers, where power amplifiers play an important part of the radio technology. Similar to Ericsson’s recent U.S. investments, we are pleased to see NXP’s investments in the U.S. semiconductor process development with the continuous focus on improving RF system performance for future high demanding radio networks."
“I am excited by the opening of our new facility in Chandler as it underscores NXP’s decades-long commitment to GaN and the communications infrastructure market,” Paul Hart, executive vice president and GM of the Radio Power Group at NXP, said in the press release. “I would like to thank our customers for their collaboration throughout the years and the entire NXP team that has been instrumental in creating the world’s most advanced RF GaN fab, which is designed and ready to scale to 6G and beyond.”
To watch the keynote speakers from NXP executives and government officials, tour the fab, view sessions of GaN, or watch panel discussions, click here.